Communications technology at a frequency range into Terahertz (THz) levels has attracted attention because it promises near-fibre-optic-speed wireless links for the 5G and post-5G world. Transmitter and receiver integrated circuits based on CMOS, which has the ability to realize such circuits with low power consumption at a low cost, are expected to become increasingly widespread, with much research into the underlying electronics currently underway. This book describes recent research on terahertz CMOS design for high-speed wireless communication. The topics covered include fundamental technologies for terahertz CMOS design, amplifier design, physical design approaches, transceiver design, and future prospects. This concise source of key information, written by leading experts in the field, is intended for researchers and professional circuit designers working in RFIC and CMOS design for telecommunications.

Inspec keywords: terahertz wave devices; CMOS integrated circuits; integrated circuit design; transceivers; radiocommunication

Other keywords: terahertz complementary metal oxide semiconductor IC; design; terahertz CMOS integrated circuits; ultrahigh-speed wireless communication; CMOS transceiver; CMOS-integrated circuits

Subjects: CMOS integrated circuits; General electrical engineering topics; Semiconductor integrated circuit design, layout, modelling and testing; Microwave circuits and devices; Radio links and equipment

Book DOI: 10.1049/PBCS035E
Chapter DOI: 10.1049/PBCS035E
ISBN: 9781785613876
e-ISBN: 9781785613883
Page count: 222
Format: PDF

Front Matter
- + Show details - Hide details
- p. (1)
1 Introduction
- + Show details - Hide details
- p. 1 –26 (26)
  
  The book chapter presents an introduction to CMOS Integrated Circuits for terahertz communication. The book covers a complementary metal oxide semiconductor (CMOS) transceiver with a frequency range of about 300 GHz, which is promising for terahertz communication, and the most important technical area for designing a circuit in the frequency range.
2 Amplifier design
- + Show details - Hide details
- p. 27 –73 (47)
  
  A 141-GHz amplifier was designed for the 40-nm CMOS process. The core was kept reasonably compact 201 x 284 μm² in spite of the five-stage differential amplifier by using a layout avoiding the coupling effect of adjacent shunt stub lines. The peak gain and 3-dB bandwidth were 20dB at 148 and 22 GHz, respectively. The power consumption was 75 mW from a 0.94-V power supply. The minimum NF was 8.5 dB at 135 GHz. The P1dB was 1.7 dB m at 138 GHz. The proposed “millipede” layout technique enables an amplifier with a small footprint to realize without sacrificing performance.
3 Physical design techniques for RF CMOS
- + Show details - Hide details
- p. 75 –108 (34)
  
  Even in the case of a terahertz circuit design, circuit simulators are still used in circuit design. However, design environments and techniques are not as well established as for radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) circuits. Thus, various preparations are required before using the circuit simulator to design ultrahigh-frequency circuits operating at millimeter wave (mmw) or terahertz. Although this preparation occasionally occupies a lot of time of work, it is no exaggeration to say that the success or failure of circuit design is determined by the quality of this preparation. This section reviews recent progress made by the authors in terahertz CMOS design including device characterization and modeling techniques.
4 Transceiver design
- + Show details - Hide details
- p. 109 –174 (66)
  
  We presented the wireless performance of a 300-GHz CMOS TX. The peak data rate reached 28 Gb/s with 16QAM. We introduced an FoM, that allows comparison of transmit-receive systems and considered how the vast frequency band around 300 GHz could be best utilized. If a CMOS technology is to be adopted, it is best to cover a very wide bandwidth (several tens of GHz) with multiple QAM channels with a reasonable per-channel data rate. This underpins the importance of QAM-capability even at 300 GHz, where very wide bandwidths are available. Superior integration capability of CMOS technology could facilitate possible eventual introduction of channel bonding.
5 Future prospects
- + Show details - Hide details
- p. 175 –183 (9)
  
  We have discussed circuit technologies and examples of architectures that are needed to realize complementary metal oxide semiconductor (CMOS) transceivers in the terahertz band. At the time of writing this book, there are still several issues to be solved until the terahertz CMOS circuit matures to technology that anyone can use. In the circuit, issues to be addressed such as a low-noise signal source and a highspeed baseband circuit remain. It is necessary to take time to study these issues in the future. However, on the other hand, the discussion on what kind of future the terahertz communication system opens will be helpful in considering what kind of technology should be developed. In the last chapter, we would like to discuss how to use frequencies in the 300 GHz band, and what kind of applications will be expanded in future if technology matures.
Back Matter
- + Show details - Hide details
- p. (1)

Design of Terahertz CMOS Integrated Circuits for High-Speed Wireless Communication

Buy e-book PDF

Front Matter

1 Introduction

2 Amplifier design

3 Physical design techniques for RF CMOS

4 Transceiver design

5 Future prospects

Back Matter

Related content