In this chapter, we introduce small-signal modeling and parameter extraction technique for FETs, an III-V compound semiconductor device pseudomorphic high electron-mobility transistor (PHEMT) is used as an example. The parameter extraction includes pad capacitances, extrinsic inductances, extrinsic resistances, and intrinsic elements extractions.

Chapter Contents:

• 4.1 HEMT Device
• 4.2 Small Signal Modeling
• 4.3 PHEMT Device Structure
• 4.4 Extraction Method of Pad Capacitances
• 4.5 Extraction Method of Extrinsic Inductances
• 4.6 Extraction Method of Extrinsic Resistance
• 4.7 Intrinsic Parameters
• 4.8 Scalable Small Signal Model
• 4.9 Semi-Analysis Method
• 4.10 Modeling up to 110 GHz
• 4.11 Summary

Inspec keywords: III-V semiconductors; high electron mobility transistors

Other keywords: III-V compound semiconductor device PHEMT; parameter extraction; small-signal modeling; extrinsic resistances; pseudomorphic high electron-mobility transistor; FET; extrinsic inductances; pad capacitances; parameter extraction technique; intrinsic elements extractions

Subjects: Other field effect devices; II-VI and III-V semiconductors