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FET Small Signal Modeling and Parameter

FET Small Signal Modeling and Parameter

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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors — Recommend this title to your library

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In this chapter, we introduce small-signal modeling and parameter extraction technique for FETs, an III-V compound semiconductor device pseudomorphic high electron-mobility transistor (PHEMT) is used as an example. The parameter extraction includes pad capacitances, extrinsic inductances, extrinsic resistances, and intrinsic elements extractions.

Chapter Contents:

  • 4.1 HEMT Device
  • 4.2 Small Signal Modeling
  • 4.3 PHEMT Device Structure
  • 4.4 Extraction Method of Pad Capacitances
  • 4.5 Extraction Method of Extrinsic Inductances
  • 4.6 Extraction Method of Extrinsic Resistance
  • 4.7 Intrinsic Parameters
  • 4.8 Scalable Small Signal Model
  • 4.9 Semi-Analysis Method
  • 4.10 Modeling up to 110 GHz
  • 4.11 Summary

Inspec keywords: III-V semiconductors; high electron mobility transistors

Other keywords: small-signal modeling; FET; pad capacitances; III-V compound semiconductor device PHEMT; extrinsic resistances; extrinsic inductances; pseudomorphic high electron-mobility transistor; intrinsic elements extractions; parameter extraction; parameter extraction technique

Subjects: Other field effect devices; II-VI and III-V semiconductors

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