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Semiconductor material systems can be categorized into silicon-based and III-V-compound-semiconductor-based devices. Silicon-based semiconductor devices, with their low-cost, high-volume production, have improved frequency response significantly as the channel length is made smaller and up to 45 nm. In contrast, compound semiconductor-based devices take advantages of their intrinsic material properties and offer superior device performance in high-frequency applications such as monolithic microwave integrated circuits (MMICs). The III-V semiconductor industries have also increased their production yield and integration scale in response to the increasing demand of RF circuits in terrestrial and mobile wireless communications.

Chapter Contents:

  • 1.1 Overview of III-V Compound Semiconductor Devices
  • 1.2 RF/Microwave Device and Circuit CAD
  • 1.3 Organization of This Book

Inspec keywords: elemental semiconductors; frequency response; silicon; III-V semiconductors

Other keywords: mobile wireless communications; MMIC; semiconductor material systems; RF circuits; integration scale; monolithic microwave integrated circuits; intrinsic material properties; silicon-based semiconductor devices; III-V semiconductor industries; III-V compound semiconductor devices; production yield; high-frequency applications; terrestrial communications; frequency response improvement

Subjects: II-VI and III-V semiconductors

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