http://iet.metastore.ingenta.com
1887

Introduction

Introduction

For access to this article, please select a purchase option:

Buy chapter PDF
£10.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Semiconductor material systems can be categorized into silicon-based and III-V-compound-semiconductor-based devices. Silicon-based semiconductor devices, with their low-cost, high-volume production, have improved frequency response significantly as the channel length is made smaller and up to 45 nm. In contrast, compound semiconductor-based devices take advantages of their intrinsic material properties and offer superior device performance in high-frequency applications such as monolithic microwave integrated circuits (MMICs). The III-V semiconductor industries have also increased their production yield and integration scale in response to the increasing demand of RF circuits in terrestrial and mobile wireless communications.

Chapter Contents:

  • 1.1 Overview of III-V Compound Semiconductor Devices
  • 1.2 RF/Microwave Device and Circuit CAD
  • 1.3 Organization of This Book

Inspec keywords: elemental semiconductors; frequency response; silicon; III-V semiconductors

Other keywords: mobile wireless communications; MMIC; semiconductor material systems; RF circuits; integration scale; monolithic microwave integrated circuits; intrinsic material properties; silicon-based semiconductor devices; III-V semiconductor industries; III-V compound semiconductor devices; production yield; high-frequency applications; terrestrial communications; frequency response improvement

Subjects: II-VI and III-V semiconductors

Preview this chapter:
Zoom in
Zoomout

Introduction, Page 1 of 2

| /docserver/preview/fulltext/books/ew/sbew027e/SBEW027E_ch1-1.gif /docserver/preview/fulltext/books/ew/sbew027e/SBEW027E_ch1-2.gif

Related content

content/books/10.1049/sbew027e_ch1
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address