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A complete and rigorous description of biasing techniques, including all temperature and leakage effects, for bipolar, JFET, dual-gate FET, and hybrid devices, is beyond the scope of this chapter. Except in rare applications, such as calibrated output-level oscillators, the bias schemes given here provide a more than adequate degree of bias point definition and stability. An active bipolar bias network is given as the final bias example. Resorting to even this modest level of bias network complexity is seldom required.

Chapter Contents:

  • 5.1 Bipolar Transistor Biasing
  • 5.2 Simple Feedback Biasing
  • 5.3 One-Battery Biasing
  • 5.4 CC Negative Supply Biasing
  • 5.5 Dual Supply Biasing
  • 5.6 JFET Biasing
  • 5.7 Grounded Source
  • 5.8 Self-Bias
  • 5.9 Dual-gate FET
  • 5.10 Active Bipolar Biasing
  • 5.11 Hybrid Biasing
  • 5.12 References

Inspec keywords: bipolar transistors; junction gate field effect transistors; circuit stability

Other keywords: hybrid devices; bipolar transistor; dual-gate FET; JFET; temperature effects; active bipolar bias network; bias point definition; calibrated output-level oscillators; bias network complexity; leakage effects; bias stability; biasing techniques

Subjects: Bipolar transistors

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