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GaAs FET Oscillators

GaAs FET Oscillators

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Microwave Field-Effect Transistors: Theory, design and applications — Recommend this title to your library

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In this chapter the design and application of the GaAs FET as microwave oscillators has been covered. It was seen that the introduction of external elements is usually necessary to induce negative resistance conditions. Apart from the relatively poor close to carrier noise performance of free running GaAs FET oscillators, their other features appear quite attractive. The compatibility of FET oscillator circuits and ceramic resonators have resulted in improved performance of stabilized sources. Electronic tuning capabilities of GaAs FET oscillators using varactor diodes and VIG resonators are impressive and will form important building blocks for microwave systems.

Chapter Contents:

  • 7.1 Introduction
  • 7.2 Induced Negative Resistance
  • 7.3 S-Parameter Mapping
  • 7.4 Oscillator Design
  • 7.5 Free-running Oscillators-Performance Review
  • 7.6 Stabilized Oscillators
  • 7.7 Dielectric Resonators
  • 7.8 Dielectric Resonator Stabilized FET Oscillators
  • 7.9 Electronic Tuning Of GaAs FET Oscillators
  • 7.10 Varactor Tuned FET Oscillators
  • 7.11 Yig Tuned GaAs FET Oscillators
  • 7.12 Pulsed RF Oscillators
  • 7.13 Conclusions
  • 7.14 Bibliography

Inspec keywords: oscillators; field effect transistors; gallium arsenide; microwave oscillators; resonators; varactors

Other keywords: FET oscillators; ceramic resonators; varactor diodes; GaAs; microwave oscillators; VIG resonators

Subjects: Waveguide and microwave transmission line components; Junction and barrier diodes; Oscillators; Microwave circuits and devices

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