The Design of Transistor Amplifiers

The Design of Transistor Amplifiers

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This chapter has dealt with the extensive subject of microwave amplifier design with particular reference to the use of gallium arsenide field effect transistors. The descriptions given are by no means complete and the reader is referred to the references as a means to further study.

Chapter Contents:

  • 5.1 Introduction
  • 5.2 Low Noise Small Signal Amplifiers
  • 5.3 Example of Narrow Band Amplifier Design
  • 5.4 Example of a Broadband Amplifier Design
  • 5.5 Designing an Amplifier For Optimum Noise Figure
  • 5.6 Broadband Amplifier For Minimum Noise Figure
  • 5.7 Computer-Aided Design Practice
  • 5.8 CAD Example
  • 5.9 The Use Of Single Ended and Balanced Amplifiers
  • 5.10 Variations in Amplifier Performance
  • 5.11 Designing an Amplifier for a Specified Linear Output
  • 5.12 Feedback, Active Matching and Travelling Wave
  • 5.13 Power Amplifiers
  • 5.14 Narrow Band Power FET Amplifier Design
  • 5.15 Broadband Power FET Amplifier Design
  • 5.16 Maximum Spurious Free Dynamic Range Amplifiers
  • 5.17 Power Combining Techniques
  • 5.18 Thermal Considerations in Power Amplifier Design
  • 5.19 Pulsed Operation Of Power FETs
  • 5.20 Reflection Amplifiers
  • 5.21 Conclusions
  • 5.22 Bibliography

Inspec keywords: III-V semiconductors; field effect transistor circuits; gallium compounds; microwave amplifiers

Other keywords: gallium arsenide field effect transistors; microwave amplifier design; transistor amplifiers

Subjects: Microwave tubes; Amplifiers

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