Requirements and Fabrication of GaAs FETs
This chapter has attempted to give a review of material preparation techniques and FET fabrication processes related specifically to GaAs.With the advent of ion implantation and more complicated device structures 'wet' etching techniques are giving way to 'dry' methods such as ion beam milling to define gate metallization and plasma etching for dielectric definition. Also, considerable effort has been applied to improving the reliability of both low-noise and power FETs by careful choice of metallizations and device design.
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