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Requirements and Fabrication of GaAs FETs

Requirements and Fabrication of GaAs FETs

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This chapter has attempted to give a review of material preparation techniques and FET fabrication processes related specifically to GaAs.With the advent of ion implantation and more complicated device structures 'wet' etching techniques are giving way to 'dry' methods such as ion beam milling to define gate metallization and plasma etching for dielectric definition. Also, considerable effort has been applied to improving the reliability of both low-noise and power FETs by careful choice of metallizations and device design.

Chapter Contents:

  • 4.1 Introduction
  • 4.2 Material Requirements
  • 4.3 FET Fabrication Techniques
  • 4.4 Conclusions
  • 4.5 Bibliography

Inspec keywords: semiconductor device reliability; power field effect transistors; wetting; semiconductor device metallisation; drying; gallium arsenide; III-V semiconductors; materials preparation; sputter etching

Other keywords: wet etching techniques; ion implantation; material preparation techniques; GaAs; power FET reliability; FET fabrication processes; bibliography; ion beam milling; device design; FET requirements; dielectric definition; scratch protection layers; plasma etching; low-noise reliability; dry methods; gate metallization

Subjects: Metallisation and interconnection technology; Other field effect devices; Reliability

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