GaAs FET Theory-Power

GaAs FET Theory-Power

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This chapter will review the operating principles of the power GaAs FET and discuss the various structures that are being used to increase device performance. The large signal performance of the device will be analyzed together with its third order intermodulation distortion and gain compression characteristics.

Chapter Contents:

  • 3.1 Introduction
  • 3.2 Principles Of Operation
  • 3.3 Modeling GaAs FET To Predict Large Signal
  • 3.4 Predictions Of Non-linear Performance
  • 3.5 Intermodulation Performance
  • 3.6 Power FET Device Performance
  • 3.7 Power FET Results
  • 3.8 Conclusions
  • 3.9 Bibliography

Inspec keywords: power field effect transistors; gallium arsenide

Other keywords: GaAs; large signal performance; device performance; gain compression characteristics; intermodulation distortion; FET theory power; power FET

Subjects: Power semiconductor devices; Insulated gate field effect transistors

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