The focus of this chapter is to motivate the need to treat high-power RF, microwave, and mm-wave transistors as distributed multiphysical systems and this in turn motivates the need to develop new measurement methodologies.

Chapter Contents:

• 4.1 Introduction
• 4.2 Classical design techniques and transistor layout
• 4.3 Thermal measurements
• 4.3.1 Infrared thermography
• 4.3.2 Raman spectroscopy
• 4.3.3 Thermoreflectance imaging
• 4.4 Electromagnetic field measurements
• 4.4.1 Metallic probes
• 4.4.2 Electro-optic probing
• 4.5 Multiphysics measurements
• 4.5.1 System calibration and validation
• 4.5.2 Measurements of high-power LDMOS transistors
• 4.5.3 Measurements of GaN HEMTs
• 4.5.4 Measurements of Doherty power amplifiers
• 4.6 Conclusion
• References

Inspec keywords: microwave power amplifiers

Other keywords: distributed multiphysical systems; RF/microwave power amplifiers; mm-wave transistors; multiphysics measurements

Subjects: Microwave circuits and devices; Amplifiers; Thermometry; Thermal variables measurement