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Integration of high-performance V-band GAN MMIC HPA for the QVlift project

Integration of high-performance V-band GAN MMIC HPA for the QVlift project

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In the framework of the Horizon 2020 project QVLIFT, funded by the European Commission, a V-band high power amplifier based on gallium nitride (GaN) monolithic microwave integrated circuits (MMIC) technology was designed and developed. Design manufacturing and on-wafer pulsed measurements of two runs of MMIC fabrication were performed and the best chipsets demonstrated peak output power of about 5 W in pulsed mode. Waveguide modules were integrated and tested and are able to provide up to 2 W at 48 GHz in continuous wave.

Chapter Contents:

  • 11.1 Introduction
  • 11.2 Solid state GaN power amplifier design
  • 11.3 HPA measurement test setup and results
  • 11.3.1 Output power and gain compression of drivers
  • 11.3.2 Insertion loss measurements
  • 11.3.3 HPA on-wafer measurements
  • 11.3.4 HPA preliminary power measurements
  • 11.4 Conclusions
  • Acknowledgments
  • References

Inspec keywords: waveguides; integrated circuit design; gallium compounds; integrated circuit manufacture; III-V semiconductors; MMIC power amplifiers; integrated circuit measurement; wide band gap semiconductors

Other keywords: Horizon 2020 project QVLIFT; waveguide modules; GaN; gallium nitride monolithic microwave integrated circuit technology; V-band high power amplifier; pulsed mode; high-performance V-band gallium nitride MMIC HPA integration; design manufacturing; on-wafer pulsed measurements; MMIC fabrication; frequency 48.0 GHz

Subjects: Semiconductor industry; Amplifiers; Production facilities and engineering; Analogue circuit design, modelling and testing; Semiconductor integrated circuit design, layout, modelling and testing; Microwave integrated circuits; Waveguides and microwave transmission lines

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