Your browser does not support JavaScript!

Integration of high-performance V-band GAN MMIC HPA for the QVlift project

Integration of high-performance V-band GAN MMIC HPA for the QVlift project

For access to this article, please select a purchase option:

Buy chapter PDF
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Advances in Communications Satellite Systems: Proceedings of the 37th International Communications Satellite Systems Conference (ICSSC-2019) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In the framework of the Horizon 2020 project QVLIFT, funded by the European Commission, a V-band high power amplifier based on gallium nitride (GaN) monolithic microwave integrated circuits (MMIC) technology was designed and developed. Design manufacturing and on-wafer pulsed measurements of two runs of MMIC fabrication were performed and the best chipsets demonstrated peak output power of about 5 W in pulsed mode. Waveguide modules were integrated and tested and are able to provide up to 2 W at 48 GHz in continuous wave.

Chapter Contents:

  • 11.1 Introduction
  • 11.2 Solid state GaN power amplifier design
  • 11.3 HPA measurement test setup and results
  • 11.3.1 Output power and gain compression of drivers
  • 11.3.2 Insertion loss measurements
  • 11.3.3 HPA on-wafer measurements
  • 11.3.4 HPA preliminary power measurements
  • 11.4 Conclusions
  • Acknowledgments
  • References

Inspec keywords: waveguides; integrated circuit design; gallium compounds; integrated circuit manufacture; III-V semiconductors; MMIC power amplifiers; integrated circuit measurement; wide band gap semiconductors

Other keywords: Horizon 2020 project QVLIFT; waveguide modules; GaN; gallium nitride monolithic microwave integrated circuit technology; V-band high power amplifier; pulsed mode; high-performance V-band gallium nitride MMIC HPA integration; design manufacturing; on-wafer pulsed measurements; MMIC fabrication; frequency 48.0 GHz

Subjects: Semiconductor industry; Amplifiers; Production facilities and engineering; Analogue circuit design, modelling and testing; Semiconductor integrated circuit design, layout, modelling and testing; Microwave integrated circuits; Waveguides and microwave transmission lines

Preview this chapter:
Zoom in

Integration of high-performance V-band GAN MMIC HPA for the QVlift project, Page 1 of 2

| /docserver/preview/fulltext/books/te/pbte095e/PBTE095E_ch11-1.gif /docserver/preview/fulltext/books/te/pbte095e/PBTE095E_ch11-2.gif

Related content

This is a required field
Please enter a valid email address