This paper presents the final test results of the Low-Noise Amplifier (LNA) module developed in Thales under a contract with the European Space Agency (ESA) operating in the frequency range 47.2 to 51.6 GHz. The LNA, featuring an unsurpassed noise figure of less than 2.8dB all over the band, is a complete Engineering Model (EM), ready to be employed as a front-end in advanced Q/V band payload on board of modern High Throughput Satellites (HTS). It provides 45 dB of gain automatically compensated in temperature (range -30 to +65 °C) and high linearity, performing a third order intercept point (IP3) of 24dBm with a power consumption of 870 mW. All the MMICs composing the line-up have been fabricated in Europe by using the recently space qualified process 0.1μm GaAs PHEMT provided by UMS.

Inspec keywords: HEMT integrated circuits; space vehicle electronics; integrated circuit modelling; low noise amplifiers; field effect MIMIC; compensation; gallium arsenide; MMIC amplifiers; III-V semiconductors; millimetre wave amplifiers

Other keywords: temperature compensation; power consumption; PHEMT; GaAs; frequency 47.2 GHz to 51.6 GHz; HTS; power 870.0 mW; size 0.1 mum; advanced Q-V band payload; LNA; European Space Agency; high throughput satellite applications; gain -30 dB to 65 dB; third order intercept point; space qualified process; unsurpassed noise figure; modern high throughput satellites; V-band low-noise amplifier module; MMICs; complete engineering model; temperature -30.0 degC to 65.0 degC

Subjects: Amplifiers; Other field effect integrated circuits; Semiconductor integrated circuit design, layout, modelling and testing; Microwave integrated circuits; Space vehicle electronics