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STEM characterization of solar cells

STEM characterization of solar cells

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In this chapter, the author will summarize some of the more recent results of atomic resolution transmission electron microscopy of defects and GBs in CdTe. Aberration-corrected STEM has developed into a powerful tool to characterize the local atomic and electronic structures of materials. Due to the incoherent nature of the imaging process, the atomic-resolution high-angle annular dark-field (HAADF) images can be used directly to determine the atomic configurations at GBs or dislocation cores. Moreover, recent developments in spectrometer technology now enable atomic-resolution chemical quantification and measurements of the local density of unoccupied states above the Fermi level. When combined with first principles modeling, electron-beam-induced current (EBIC) measurements, or device-level modeling, STEM characterization can provide powerful information about the role that GBs and individual defect complexes play on Voc, FF, and thus, the overall cell conversion efficiency.

Chapter Contents:

  • 11.1 Introduction
  • 11.2 Scanning transmission electron microscopy
  • 11.3 Structural and chemical characterization of CdTe solar cell devices
  • 11.4 High-resolution imaging and spectroscopy
  • 11.5 Correlating STEM imaging with DFT modeling
  • 11.6 Conclusions and outlook
  • Acknowledgments
  • References

Inspec keywords: tellurium compounds; solar cells; cadmium compounds

Other keywords: device-level modeling; STEM characterization; local atomic structure; Fermi level; local electronic structure; atomic resolution transmission electron microscopy; electron-beam-induced current measurements; atomic-resolution high-angle annular dark-field images; atomic-resolution chemical quantification; solar cells

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays

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