STEM characterization of solar cells
In this chapter, the author will summarize some of the more recent results of atomic resolution transmission electron microscopy of defects and GBs in CdTe. Aberration-corrected STEM has developed into a powerful tool to characterize the local atomic and electronic structures of materials. Due to the incoherent nature of the imaging process, the atomic-resolution high-angle annular dark-field (HAADF) images can be used directly to determine the atomic configurations at GBs or dislocation cores. Moreover, recent developments in spectrometer technology now enable atomic-resolution chemical quantification and measurements of the local density of unoccupied states above the Fermi level. When combined with first principles modeling, electron-beam-induced current (EBIC) measurements, or device-level modeling, STEM characterization can provide powerful information about the role that GBs and individual defect complexes play on Voc, FF, and thus, the overall cell conversion efficiency.
STEM characterization of solar cells, Page 1 of 2
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