Across-talk consideration

Across-talk consideration

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When introducing fundamentals of dynamic characterization in Chapter 4, we started from a three-phase voltage source converter, which is a widely applied circuit for many applications, and derived a simplified configuration to equivalently evaluate the switching behavior of WBG devices. With this assumption, details of the DPT have been comprehensively discussed including DPT basics, gate drive, layout design, protection, measurement, and data processing in previous chapters. However, the observed switching performance of WBG devices in power converters is almost always worse than test results by DPT with the common observation of slower switching speed and higher switching losses. Therefore, starting from this chapter, we will revisit the assumptions made for the simplification of the dynamic characterization in DPT, and better understand the impacting factors and limitations of the switching performance in a practical system. As a result, we will either modify the conventional DPT to characterize the switching behavior more accurately for an actual converter or will develop solution(s) to address the adverse effects of the identified limitations on the switching performance such that the conventional DPT results can still be valid and used. We highlight key elements that can potentially affect the switching characteristics in a three-phase PWM voltage source inverter. Within the switch/switch-based phase-leg configuration of a single phase, gate drive, parasitics, and interference between the lower and upper switches (i.e., cross-talk) are the critical elements for high-speed switching performance of WBG devices; while in the entire three-phase converter system, other phase-legs, heatsink, and motor/cable load are potential limitations for fast switching speed behavior. Among these six potential impacting factors, gate drive and parasitics have been covered in the conventional DPT and discussed specifically in Chapters 5 and 6. This chapter focuses on the cross-talk. Within this chapter, first, the mechanism causing the cross-talk is discussed and unique challenges for WBG devices are analyzed. Then, practical solutions to mitigate the cross-talk are summarized and their effectiveness is compared. Finally, the methodology to evaluate the impact of cross-talk on the dynamic characterization is described. Two case studies based on (1) GaN transistor and (2) SiC MOSFET are presented to quantify the influence of cross-talk for the WBG dynamic characteristics.

Chapter Contents:

  • 9.1 Mechanism causing cross-talk
  • 9.2 Solutions for cross-talk suppression
  • 9.2.1 Passive solutions
  • 9.2.2 Active solutions
  • Gate impedance regulation (GIR)-based active gate drive
  • GVC-based active gate drive
  • 9.2.3 Summary of cross-talk suppression solutions
  • 9.3 Methodology for characterization of cross-talk-related switching performance
  • 9.3.1 Case study 1: GaN HEMT with passive solution
  • Test setup
  • Effect of cross-talk on switching performance
  • Discussion
  • 9.3.2 Case study 2: SiC MOSFET with active gate drive circuit
  • Test setup
  • Effect of cross-talk on switching performance
  • Discussion
  • 9.4 Summary
  • References

Inspec keywords: MOSFET; semiconductor device testing; gallium compounds; power semiconductor devices; PWM invertors; silicon compounds; crosstalk; III-V semiconductors; semiconductor device measurement; wide band gap semiconductors

Other keywords: SiC; power semiconductor devices; GaN transistor; power converters; switch/switch-based phase-leg configuration; three-phase voltage source converter; three-phase converter system; three-phase PWM voltage source inverter; dynamic characterization; WBG devices; cross-talk; SiC MOSFET; GaN; switching performance; double pulse test

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing; Power electronics, supply and supervisory circuits; Power semiconductor devices

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