Today, WBG power devices are often expensive or sampled in limited quantities. In addition, intrinsic characteristics of WBG semiconductors enable WBG devices with very high voltage capability, for example, 10 kV SiC MOSFETs. Thus, due to the limited availability, high cost, and unique capability of devices, proper protection for WBG device DPT is important. The protection includes two categories: one is to protect DUT and DPT circuit, and the other is for the operator safety, especially when testing high-voltage WBG devices. In summary, short-circuit and overcurrent protection is critical for WBG-based dynamic characterization.
Protection design for double pulse test, Page 1 of 2
< Previous page Next page > /docserver/preview/fulltext/books/po/pbpo128e/PBPO128E_ch7-1.gif /docserver/preview/fulltext/books/po/pbpo128e/PBPO128E_ch7-2.gif