Protection design for double pulse test

Protection design for double pulse test

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Today, WBG power devices are often expensive or sampled in limited quantities. In addition, intrinsic characteristics of WBG semiconductors enable WBG devices with very high voltage capability, for example, 10 kV SiC MOSFETs. Thus, due to the limited availability, high cost, and unique capability of devices, proper protection for WBG device DPT is important. The protection includes two categories: one is to protect DUT and DPT circuit, and the other is for the operator safety, especially when testing high-voltage WBG devices. In summary, short-circuit and overcurrent protection is critical for WBG-based dynamic characterization.

Chapter Contents:

  • 7.1 Overview of state-of-the-art protection schemes for WBG devices
  • 7.2 Solid-state circuit breaker
  • 7.2.1 Operation principle
  • 7.2.2 Circuit implementation and design consideration
  • Gate drive IC
  • νGE control unit
  • νGE detection unit
  • 7.2.3 Test setup and procedure
  • 7.2.4 Case study
  • IGBT selection
  • Gate drive IC selection
  • Design of νGE control unit
  • Design of νGE detection unit
  • Testing
  • 7.3 Consideration for high-voltage WBG device DPT
  • 7.3.1 Safety consideration
  • 7.3.2 Protection scheme
  • 7.4 Summary
  • References

Inspec keywords: power semiconductor devices; wide band gap semiconductors; overcurrent protection; elemental semiconductors; short-circuit currents; power MOSFET

Other keywords: WBG device DPT; DPT circuit protection; WBG-based dynamic characterization; protection design; high-voltage WBG device testing; DUT circuit protection; silicon carbide MOSFET; short-circuit protection; double pulse test; overcurrent protection

Subjects: Power system protection; Elemental semiconductors; Insulated gate field effect transistors; Power semiconductor devices

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