The author provides a general background on atmospheric pressure chemical vapor deposition (APCVD) of Al₂O₃, from its origins to more recent research, focusing on surface passivation applications for solar cells and the composition and structure of the APCVD Al₂O₃-Si interface.

Chapter Contents:

• 6.1 Background on atmospheric pressure chemical vapor deposition
• 6.2 Composition and structure of the APCVD Al2O3–Si interface
• References

Inspec keywords: chemical vapour deposition; passivation; interface structure; alumina; silicon; elemental semiconductors; solar cells; semiconductor-insulator boundaries

Other keywords: silicon surface passivation; solar cells; Si; atmospheric pressure chemical vapor deposition; APCVD; Al₂O₃ ; interface structure; interface composition

Subjects: Elemental semiconductors; Chemical vapour deposition; Surface treatment (semiconductor technology); Solid-solid interfaces; Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures; Photoelectric conversion; solar cells and arrays; Surface treatment and degradation in semiconductor technology; Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Chemical vapour deposition; Solar cells and arrays