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Atmospheric pressure chemical vapor deposition of aluminum oxide for silicon surface passivation—background and materials science

Atmospheric pressure chemical vapor deposition of aluminum oxide for silicon surface passivation—background and materials science

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The author provides a general background on atmospheric pressure chemical vapor deposition (APCVD) of Al2O3, from its origins to more recent research, focusing on surface passivation applications for solar cells and the composition and structure of the APCVD Al2O3-Si interface.

Chapter Contents:

  • 6.1 Background on atmospheric pressure chemical vapor deposition
  • 6.2 Composition and structure of the APCVD Al2O3–Si interface
  • References

Inspec keywords: chemical vapour deposition; passivation; interface structure; alumina; silicon; elemental semiconductors; solar cells; semiconductor-insulator boundaries

Other keywords: silicon surface passivation; solar cells; Si; atmospheric pressure chemical vapor deposition; APCVD; Al2O3; interface structure; interface composition

Subjects: Elemental semiconductors; Chemical vapour deposition; Surface treatment (semiconductor technology); Solid-solid interfaces; Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures; Photoelectric conversion; solar cells and arrays; Surface treatment and degradation in semiconductor technology; Electrical properties of elemental semiconductors (thin films/low-dimensional structures); Chemical vapour deposition; Solar cells and arrays

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