The authors review developments in the use of PECVD in the growth of AlO_x layers for solar cells. They consider the microwave PECVD and inductively coupled plasma PECVD methods, and the characteristics of layers grown by the 2 techniques, Si surface passivation, and solar cell applications.

Chapter Contents:

• 5.1 Introduction
• 5.1.1 Atomic layer deposition and earlier work
• 5.1.2 Alternatives to classical ALD
• 5.1.3 PECVD deposition techniques
• 5.2 Plasma and layer characteristics of MW-PECVD
• 5.2.1 Plasma characteristics
• 5.2.2 Homogeneity of the process
• 5.2.3 Layer characteristics
• 5.2.3.1 Potential application of aluminum oxide
• 5.2.3.2 Optical characteristics and chemical composition
• 5.2.3.3 Passivation of lowly doped p-type silicon surface
• 5.2.3.4 Passivation of highly doped p-type silicon surface
• 5.3 Plasma and layer characteristics of ICP-PECVD
• 5.3.1 Plasma simulations
• 5.3.2 In-situ plasma monitoring investigation
• 5.3.3 Ex-situ investigation of layer and interface properties
• 5.4 Performance comparison with other techniques (P&M)
• 5.4.1 Comparison between MW-, ICP-PECVD, and ALD
• 5.4.2 Solar cell results
• References

Inspec keywords: aluminium compounds; solar cells; passivation; surface recombination; plasma CVD

Other keywords: solar cells; Si; surface passivation; plasma-enhanced chemical vapor deposition; AlO; ICP-PECVD; microwave PECVD

Subjects: Photoelectric conversion; solar cells and arrays; Plasma applications in manufacturing and materials processing; Thin film growth, structure, and epitaxy; Surface treatment and degradation in semiconductor technology; Surface conductivity and carrier phenomena; Solar cells and arrays; Chemical vapour deposition; Surface treatment (semiconductor technology); Chemical vapour deposition