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PECVD-AlOx

PECVD-AlOx

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Surface Passivation of Industrial Crystalline Silicon Solar Cells — Recommend this title to your library

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The authors review developments in the use of PECVD in the growth of AlOx layers for solar cells. They consider the microwave PECVD and inductively coupled plasma PECVD methods, and the characteristics of layers grown by the 2 techniques, Si surface passivation, and solar cell applications.

Chapter Contents:

  • 5.1 Introduction
  • 5.1.1 Atomic layer deposition and earlier work
  • 5.1.2 Alternatives to classical ALD
  • 5.1.3 PECVD deposition techniques
  • 5.2 Plasma and layer characteristics of MW-PECVD
  • 5.2.1 Plasma characteristics
  • 5.2.2 Homogeneity of the process
  • 5.2.3 Layer characteristics
  • 5.2.3.1 Potential application of aluminum oxide
  • 5.2.3.2 Optical characteristics and chemical composition
  • 5.2.3.3 Passivation of lowly doped p-type silicon surface
  • 5.2.3.4 Passivation of highly doped p-type silicon surface
  • 5.3 Plasma and layer characteristics of ICP-PECVD
  • 5.3.1 Plasma simulations
  • 5.3.2 In-situ plasma monitoring investigation
  • 5.3.3 Ex-situ investigation of layer and interface properties
  • 5.4 Performance comparison with other techniques (P&M)
  • 5.4.1 Comparison between MW-, ICP-PECVD, and ALD
  • 5.4.2 Solar cell results
  • References

Inspec keywords: aluminium compounds; solar cells; passivation; surface recombination; plasma CVD

Other keywords: solar cells; Si; surface passivation; plasma-enhanced chemical vapor deposition; AlO; ICP-PECVD; microwave PECVD

Subjects: Photoelectric conversion; solar cells and arrays; Plasma applications in manufacturing and materials processing; Thin film growth, structure, and epitaxy; Surface treatment and degradation in semiconductor technology; Surface conductivity and carrier phenomena; Solar cells and arrays; Chemical vapour deposition; Surface treatment (semiconductor technology); Chemical vapour deposition

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