Material properties of Al2O3 grown on Si: interface trap density (Dit) and fixed charge density (Qf)
Chapter 4 gives a summary based on one of the authors' earlier articles (Vermang (2012)), and consistent with more general overview papers. First, Section 4.1 describes recombination at Si surfaces theoretically to clarify two key passivation approaches: chemical and field effect passivation. Then, Section 4.2 quantifies the chemical and field effect passivation of Al2O3, i.e., its interface trap density and fixed charge density, respectively. Finally, Section 4.3 provides a larger picture by comparing Al2O3 to other Si surface layers, and showing that Al2O3 surface passivation can also be applied to passivate thin film photovoltaics.
Material properties of Al2O3 grown on Si: interface trap density (Dit) and fixed charge density (Qf), Page 1 of 2
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