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Material properties of Al2O3 grown on Si: interface trap density (Dit) and fixed charge density (Qf)

Material properties of Al2O3 grown on Si: interface trap density (Dit) and fixed charge density (Qf)

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Chapter 4 gives a summary based on one of the authors' earlier articles (Vermang (2012)), and consistent with more general overview papers. First, Section 4.1 describes recombination at Si surfaces theoretically to clarify two key passivation approaches: chemical and field effect passivation. Then, Section 4.2 quantifies the chemical and field effect passivation of Al2O3, i.e., its interface trap density and fixed charge density, respectively. Finally, Section 4.3 provides a larger picture by comparing Al2O3 to other Si surface layers, and showing that Al2O3 surface passivation can also be applied to passivate thin film photovoltaics.

Chapter Contents:

  • 4.1 Theoretical preface
  • 4.2 Al2O3 material properties
  • 4.3 Epilog
  • Acknowledgments
  • References

Inspec keywords: elemental semiconductors; interface states; surface recombination; passivation; silicon; alumina

Other keywords: field effect passivation; material properties; Si surface layers; Al2O3; interface trap density; Si; surface passivation; fixed charge density; surface recombination; Si surfaces

Subjects: Surface treatment (semiconductor technology); Surface conductivity and carrier phenomena; Surface treatment and degradation in semiconductor technology; Thin film growth, structure, and epitaxy; Surface states, surface band structure, surface electron density of states; Elemental semiconductors; Metal-insulator-semiconductor structures

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