The author focuses on the surface passivation mechanism of Al2O3 and how it is related to its material properties. The chapter starts off with a short description of the fundamentals of surface recombination stressing the importance of the electronic properties of the c-Si/Al2O3 interface with respect to defect density and fixed charge. Next, an overview is presented of the electronic properties for Al2O3 layers synthesised on c-Si substrates by various techniques. Finally, these electronic properties are related to the atomic-scale material properties for Al2O3 films with a particular focus on the, typically unintentional, presence of an interfacial silicon oxide film.
Material properties of AlOx for silicon surface passivation, Page 1 of 2
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