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Spatial Al2O3 ALD: from Lab to Fab

Spatial Al2O3 ALD: from Lab to Fab

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The book chapter reviews the process of spatial Al2O3 atomic layer deposition (ALD). Aspects covered include: time-based versus spatial methods; proof of principle spatial ALD; spatial ALD applications; from the proof of principle to InPassion® LAB; transform from Lab to Fab-InPassion® ALD; second generation-InPassion® ALD; combining the stack layers.

Chapter Contents:

  • 14.1 Time-based versus spatial
  • 14.2 Proof of principle spatial ALD
  • 14.3 Spatial ALD application
  • 14.4 From the proof of principle to InPassion® LAB
  • 14.5 Transform from Lab to Fab—InPassion® ALD
  • 14.6 Second generation—InPassion® ALD
  • 14.6.1 How wafer thickness variation affected the adaptation of the InPassion® ALD product
  • 14.6.2 Adapt the reactor gap to improve reliability of the ALD system
  • 14.7 Combining the stack layers
  • References

Inspec keywords: passivation; semiconductor device manufacture; atomic layer deposition; alumina; semiconductor industry; solar cells; elemental semiconductors; silicon

Other keywords: Fab-InPassion ALD; stack layers; atomic layer deposition; time-based method; Al2O3; Si; spatial methods; spatial Al2O3 ALD

Subjects: Semiconductor industry; Vacuum deposition; Thin film growth, structure, and epitaxy; Surface treatment (semiconductor technology); Production facilities and engineering; Solar cells and arrays; Surface treatment and coating techniques; Vacuum deposition; Surface treatment and degradation in semiconductor technology; Optoelectronics manufacturing; Photoelectric conversion; solar cells and arrays

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