Double-layer dielectric stacks for advanced surface passivation of crystalline silicon solar cells
Surface passivation of moderately doped and heavily doped p-type surfaces is of major importance to both p-type and n-type solar cells. Considering the practical importance and relevance of p-type Si surfaces, i.e. a moderately doped (undiffused) p-type Si surface and a heavily doped p±-type Si surface, this chapter focuses on the investigation of surface passivation using double-layer dielectric stacks. We study a positively charged dielectric stack (i.e. SiOx capped with SiNx) as well as a negatively charged dielectric stack (i.e., AlOx capped with SiNx).
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