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The background of ReRAM devices

The background of ReRAM devices

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In this chapter, we will first introduce the characteristics of resistive random-access memory (ReRAM) devices. Post-characterization of the ReRAMs, we introduce the structural design of the ReRAMs followed by a few applicational designs of ReRAMbased devices.

Chapter Contents:

  • 3.1 ReRAM device and SPICE model
  • 3.1.1 Drift-type ReRAM device
  • 3.1.2 Diffusive-type ReRAM device
  • 3.2 ReRAM-crossbar structure
  • 3.2.1 Analog and digitized ReRAM crossbar
  • 3.2.1.1 Traditional analog ReRAM crossbar
  • 3.2.1.2 Digitalized ReRAM crossbar
  • 3.2.2 Connection of ReRAM crossbar
  • 3.2.2.1 Direct-connected ReRAM
  • 3.2.2.2 One-transistor-one-ReRAM
  • 3.2.2.3 One-selector-one-ReRAM
  • 3.3 ReRAM-based oscillator
  • 3.4 Write-in scheme for multibit ReRAM storage
  • 3.4.1 ReRAM data storage
  • 3.4.2 Multi-threshold resistance for data storage
  • 3.4.3 Write and read
  • 3.4.3.1 Write-in method
  • 3.4.3.2 Readout method
  • 3.4.4 Validation
  • 3.4.5 Encoding and 3-bit storage
  • 3.4.5.1 Exploration of the memristance range
  • 3.4.5.2 Uniform input encoding
  • 3.4.5.3 Nonuniform encoding
  • 3.5 Logic functional units with ReRAM
  • 3.5.1 OR gate
  • 3.5.2 AND gate
  • 3.6 ReRAM for logic operations
  • 3.6.1 Simulation settings
  • 3.6.2 ReRAM-based circuits
  • 3.6.2.1 Logic operations
  • 3.6.2.2 Readout circuit
  • 3.6.3 ReRAM as a computational unit-cum-memory

Inspec keywords: resistive RAM; integrated circuit design

Other keywords: ReRAM devices; post-characterization; random-access memory devices; structural design

Subjects: Memory circuits; Semiconductor integrated circuit design, layout, modelling and testing; Semiconductor storage

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