Introduction
Computing-in-memory methods based on emerging nonvolatile devices are popular in both academia and industry. Many researchers believe that this architecture will be an opportunity to break Moore's law because of its ultra-low power and high-density embedded storage. Various devices including resistive random-access memory (ReRAM), phase-change random-access memory (PCRAM), Magentic RAM (MRAM), Ferroelectric RAM (FeRAM) and NOR Flash have been discussed. ReRAM is the most promising among all these devices due to its potentiality for multilevel resistance and compatibility with CMOS technology. Well-known companies such as IBM and HP have invested in this field, and we believe that this ReRAM-based IMC will be commercialized with Internet-of-things (IoT) products in the next 2-3 years. This chapter introduces the need and motivation to deploy ML algorithms for data-intensive computations.
Introduction, Page 1 of 2
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