The following aspects are modelled: edge-emitting semiconductor lasers; superluminescent light-emitting diodes; semiconductor material electro-optical characteristics; optical gain; spontaneous emission; optical waveguides; transverse optical mode calculation; carrier photon interaction; laser cavities; carrier transport; time domain; buried heterostructure; and quantum dot lasers.

Chapter Contents:

• 2.1 Introduction
• 2.2 Electro-optical characteristics of the semiconductor active material
• 2.2.1 Optical gain and spontaneous emission
• 2.2.2 Carrier recombination and carrier life-time
• 2.3 Optical waveguides
• 2.3.1 Transverse optical mode calculation
• 2.3.2 The relevant parameters of the modal field
• 2.4 Carrier-photon interaction
• 2.4.1 A general overview
• 2.4.2 The case of laser cavity with BH waveguide
• 2.4.3 The case of laser cavity with ridge waveguide
• 2.4.4 Inclusion of the carrier transport
• 2.4.5 Inclusion of the longitudinal and spectral distribution of photons
• 2.4.6 The time domain TW model
• 2.5 Device layout
• 2.6 An example of device modeling: SLDs
• 2.6.1 Wide optical bandwidth
• 2.6.2 Ultralow reflectivity terminations
• 2.6.3 SLD layout
• References

Inspec keywords: waveguide lasers; electro-optical effects; semiconductor lasers; superluminescent diodes; laser modes; semiconductor device models; carrier mobility; quantum dot lasers; optical waveguides

Other keywords: optical waveguides; time domain; optical gain; carrier transport; buried heterostructure; electro-optical characteristics; edge-emitting semiconductor lasers; transverse optical mode calculation; laser cavities; superluminescent light-emitting diodes; spontaneous emission; quantum dot lasers; semiconductor material; carrier photon interaction

Subjects: Lasing action in semiconductors; Optical waveguides; Semiconductor lasers; Semiconductor device modelling, equivalent circuits, design and testing; Design of specific laser systems; Optical waveguides and couplers; Light emitting diodes