The following aspects are modelled: edge-emitting semiconductor lasers; superluminescent light-emitting diodes; semiconductor material electro-optical characteristics; optical gain; spontaneous emission; optical waveguides; transverse optical mode calculation; carrier photon interaction; laser cavities; carrier transport; time domain; buried heterostructure; and quantum dot lasers.
Fundamentals on modeling of edge-emitting semiconductor lasers and superluminescent light-emitting diodes, Page 1 of 2
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