The physics and chemistry of the SIMOX process are largely understood and volume manufacture of high quality SIMOX/SOI substrates is now becoming a reality with the wafer vendors optimistic that the targets specified in the ITRS for the next generation of CMOS SOI circuits can be adequately met. However, the real challenge for SIMOX is in the commercial arena can production be ramped up quickly to meet market demand with a wafer cost that industry can accept and without compromising substrate quality.

Inspec keywords: SIMOX; CMOS integrated circuits; ion implantation

Other keywords: CMOS SOI circuits; SIMOX/SOI substrates; silicon-on-insulator; substrate quality; oxide growth; wafer cost; ion implantation; SIMOX layer formation

Subjects: Metal-insulator-semiconductor structures