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Simulation framework for GaN devices with special mention to reliability concern

Simulation framework for GaN devices with special mention to reliability concern

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In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.

Chapter Contents:

  • 4.1 Introduction
  • 4.1.1 Importance of TCAD simulation
  • 4.2 Properties of GaN
  • 4.2.1 High electron mobility transistor
  • 4.3 Reliability concerns in GaN devices
  • 4.3.1 Self-heating
  • 4.3.2 Current collapse
  • 4.3.3 Thermal boundary resistance
  • 4.4 Simulation models
  • 4.4.1 Fermi
  • 4.4.2 Drift diffusion
  • 4.4.3 Thermodynamics
  • 4.4.4 Shockley–Read–Hall recombination
  • 4.4.5 Thermionic
  • 4.4.6 Traps
  • 4.4.7 Basic heat equations
  • 4.4.8 Thermoelectric power and thermal current
  • 4.4.9 Joule heat
  • 4.4.10 Thomson and Peltier heat
  • 4.5 Simulation results
  • 4.6 Summary
  • References

Inspec keywords: gallium compounds; semiconductor device reliability; wide band gap semiconductors; III-V semiconductors

Other keywords: gallium nitride devices; GaN; simulation framework; reliability

Subjects: Semiconductor devices; Reliability

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