http://iet.metastore.ingenta.com
1887

III–V compound semiconductor transistors–from planar to nanowire structures

III–V compound semiconductor transistors–from planar to nanowire structures

For access to this article, please select a purchase option:

Buy chapter PDF
$16.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.

Chapter Contents:

  • 1.1 Introduction
  • 1.2 III–V compound semiconductors
  • 1.3 Epitaxial growth techniques
  • 1.4 Heterostructure and quantum well
  • 1.5 Heterojunction bipolar transistors
  • 1.6 High electron mobility transistors
  • 1.7 Quantum well MOSFETs
  • 1.8 Nanowire field effect transistors
  • 1.9 Applications
  • References

Inspec keywords: high electron mobility transistors; semiconductor growth; semiconductor quantum wells; epitaxial growth; nanowires; heterojunction bipolar transistors; quantum well devices; MOSFET; nanofabrication; semiconductor heterojunctions; III-V semiconductors

Other keywords: epitaxial growth techniques; III-V compound semiconductor transistors; heterojunction bipolar transistors; high electron mobility transistors; nanowire structures; nanowire field effect transistors; quantum well MOSFET; heterostructure

Subjects: Low-dimensional structures: growth, structure and nonelectronic properties; Methods of thin film deposition; II-VI and III-V semiconductors; Semiconductor junctions; Nanometre-scale semiconductor fabrication technology; Semiconductor superlattices, quantum wells and related structures; Other field effect devices; Insulated gate field effect transistors; Thin film growth and epitaxy; Bipolar transistors

Preview this chapter:
Zoom in
Zoomout

III–V compound semiconductor transistors–from planar to nanowire structures, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs073g/PBCS073G_ch1-1.gif /docserver/preview/fulltext/books/cs/pbcs073g/PBCS073G_ch1-2.gif

Related content

content/books/10.1049/pbcs073g_ch1
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address