Theory and modelling of spin-transfer-torque based electronic devices

Theory and modelling of spin-transfer-torque based electronic devices

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In this chapter, we have mainly discussed STT-based classical devices. However, the promise of spin-based computing extends far beyond the devices discussed in this chapter. Some of the other promising technologies that can be employed for spin-based classical computation include quantum dots, quantum Hall bars, spins trapped in nitrogen vacancy centers, etc. Such technologies are still in their infancy and a lot of progress need to be made before such technologies may be incorporated in consumer level systems.

Chapter Contents:

  • 9.1 Introduction
  • 9.2 The spin valve or magnetic tunnel junction
  • 9.3 The Landau–Lifshitz–Gilbert–Slonczewski equation
  • 9.4 Circuit model for spin transport
  • 9.4.1 Decoupling charge and spin
  • 9.4.2 Diffusion equations in the charge–spin basis
  • 9.4.3 Lumped circuit models for spin–charge representation
  • Ferromagnetic material
  • Nonmagnetic material
  • Interface
  • 9.5 Spin accumulation at the interface between a magnetic and nonmagnetic material
  • 9.5.1 An example of RTMTJ
  • 9.6 Generation of spin current
  • 9.7 All-spin logic gate
  • 9.8 Other directions in spin-based computations
  • References

Inspec keywords: quantum dots; magnetoelectronics; quantum Hall effect

Other keywords: spin-based computing; quantum dots; nitrogen vacancy centers; STT-based classical devices; consumer level systems; quantum Hall bars; spin-transfer-torque based electronic devices; spin-based classical computation

Subjects: Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices

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