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## Emerging devices beyond CMOS: fundamentals, promises and challenges

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In this chapter, we have explained the basic operating principle of some of the emerging devices. We have highlighted distinct advantages and disadvantages of these devices. We have also compared these devices with CMOS counterpart and pointed out the challenges that must be surmounted to enable these devices to augment or replace the state-of-the-art CMOS. For most of the emerging devices, substantial research effort is required to make them suitable for the future wide scale application. Nevertheless, rapid technological breakthroughs are being made and in the near future, it will not be surprising if some of these emerging devices replace conventional CMOS for mainstream electronic applications.

Chapter Contents:

• 7.1 Charge-based devices
• 7.1.1 Tunnel field-effect transistors
• 7.1.2 Negative capacitance field-effect transistors
• 7.1.3 Mott FET or phase FET
• 7.1.4 Nano-electro-mechanical switches
• 7.2 Non-charge-based devices
• 7.2.1 Spin-wave device
• 7.2.2 Nanomagnetic logic
• 7.2.3 All spin logic
• 7.2.4 Probabilistic spin logic
• 7.3 Summary
• References

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