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Design of a novel tunnel FET for low-power applications

Design of a novel tunnel FET for low-power applications

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In this chapter, the principle of operation of tunnel FET is discussed. Existing models and modified structures including gate, source and drain engineering are explored and investigated. It depicts the application of tunnel FET in a digital circuit and as biosensor. It is found that TFET has reduced power consumption and can be used in low-power applications. Further, it acts as a better biosensor.

Chapter Contents:

  • 5.1 Introduction
  • 5.2 Basic structure and principle of operation
  • 5.3 Band diagrams
  • 5.4 Analytical models in TFET
  • 5.5 Tunnel FET electrical parameters
  • 5.5.1 ON current
  • 5.5.2 OFF current
  • 5.5.3 Gate threshold voltage
  • 5.5.4 Drain threshold voltage
  • 5.5.5 Transconductance
  • 5.5.6 Output conductance
  • 5.5.7 ION/IOFF ratio
  • 5.5.8 Capacitance
  • 5.5.9 Subthreshold swing
  • 5.6 Various TFET architectures
  • 5.7 Applications of TFET
  • 5.7.1 Complementary TFET
  • 5.7.2 Application as biosensor
  • 5.8 Summary
  • References

Inspec keywords: field effect digital integrated circuits; biosensors; tunnel field-effect transistors; low-power electronics

Other keywords: gate engineering; TFET; power consumption reduction; source engineering; low-power applications; digital circuit; biosensor; drain engineering; tunnel FET design

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

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