Design of a novel tunnel FET for low-power applications

Design of a novel tunnel FET for low-power applications

For access to this article, please select a purchase option:

Buy chapter PDF
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this chapter, the principle of operation of tunnel FET is discussed. Existing models and modified structures including gate, source and drain engineering are explored and investigated. It depicts the application of tunnel FET in a digital circuit and as biosensor. It is found that TFET has reduced power consumption and can be used in low-power applications. Further, it acts as a better biosensor.

Chapter Contents:

  • 5.1 Introduction
  • 5.2 Basic structure and principle of operation
  • 5.3 Band diagrams
  • 5.4 Analytical models in TFET
  • 5.5 Tunnel FET electrical parameters
  • 5.5.1 ON current
  • 5.5.2 OFF current
  • 5.5.3 Gate threshold voltage
  • 5.5.4 Drain threshold voltage
  • 5.5.5 Transconductance
  • 5.5.6 Output conductance
  • 5.5.7 ION/IOFF ratio
  • 5.5.8 Capacitance
  • 5.5.9 Subthreshold swing
  • 5.6 Various TFET architectures
  • 5.7 Applications of TFET
  • 5.7.1 Complementary TFET
  • 5.7.2 Application as biosensor
  • 5.8 Summary
  • References

Inspec keywords: field effect digital integrated circuits; biosensors; tunnel field-effect transistors; low-power electronics

Other keywords: gate engineering; TFET; power consumption reduction; source engineering; low-power applications; digital circuit; biosensor; drain engineering; tunnel FET design

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

Preview this chapter:
Zoom in

Design of a novel tunnel FET for low-power applications, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs073f/PBCS073F_ch5-1.gif /docserver/preview/fulltext/books/cs/pbcs073f/PBCS073F_ch5-2.gif

Related content

This is a required field
Please enter a valid email address