Using conventional memory technologies, for example, static random access memory (RAM) (SRAM), dynamic RAM (DRAM) and flash memory, it is difficult to fulfill the market requirements for higher density and lower power dissipation [1]. Therefore, semiconductor organizations are thinking that it is difficult to supply the expanding market interest for the higher density and lower power nonvolatile memories [2]. The recent invention of memristor device has given hope to semiconductor organizations by offering a less demanding approach to expand the density by utilizing the current fabrication technology [3]. This is conceivable on the grounds that memristor devices just require two terminals to work, which utilize less wafer space, reduce the complexity of circuit interconnections and encourage highdensity integration when used as a part of crossbar structures [4-7]. Besides all these features of memristor, it also has some additional characteristics like low power and non-volatility [8]. But the main limitation of the memristor-based memory cell is its slow write time access [9]. Transmission gate is capable of providing rail-to-rail swing and can easily pass both logic “0” and logic “1” [10]. These advantages help to overcome the problem of slow write time access of memristor. The objective of this chapter is to understand what a memristor is and how can a memristor be modeled for its current-voltage (I-V) characteristics. Further, this chapter deals with the concepts of transmission gates, then using the designed memristor and transmission gates, a DRAM cell was designed. The designed memory cell was simulated using HSPICE tool. The result shows that the memristor-based DRAM cell can replace the conventional memory cell in future to achieve higher density and lower power dissipation.

Chapter Contents:

• 4.1 Introduction to memristor
• 4.1.1 Memristor overview
• 4.1.2 Memristance
• 4.1.3 Types of memristor
• 4.1.4 Working of memristor
• 4.1.5 Fingerprints of memristor
• 4.1.6 Fabrication steps of memristor
• 4.1.7 Models of memristor
• 4.1.7.1 Linear ion drift model
• 4.1.7.2 Nonlinear ion drift model
• 4.1.7.3 Simmons tunnel model
• 4.1.7.4 TEAM memristor model
• 4.1.8 Application and properties of memristor
• 4.2 Memristor and transmission gate-based DRAM cell
• 4.2.1 Introduction to transmission gates
• 4.2.2 Overview of semiconductor memories
• 4.2.2.1 Volatile memory
• 4.2.2.2 Nonvolatile memory
• 4.2.2.3 Why memristor-based memories?
• 4.2.3 Design of memristor and transmission gate-based DRAM cell
• 4.2.3.1 Design methodology
• 4.2.3.2 Read and write operation
• 4.3 Simulation results
• 4.3.1 Validation of memristor model
• 4.3.2 Simulation result of memristor and transmission-gate-based DRAM cell
• 4.3.3 Comparison of results
• 4.4 Summary
• References

Inspec keywords: memristors; DRAM chips; logic design; low-power electronics

Other keywords: expanding market interest; memristor-based DRAM cell; time access; current fabrication technology; memristor device; market requirements; transmission gate; current-voltage characteristics; memristor-based memory cell; nonvolatile memories; low-power application; semiconductor organizations

Subjects: Memory circuits; Resistors; Logic design methods; Electrical/electronic equipment (energy utilisation); Semiconductor storage; Digital circuit design, modelling and testing