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High performing metal–oxide semiconductor thin-film transistors

High performing metal–oxide semiconductor thin-film transistors

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VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation — Recommend this title to your library

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This chapter provides an overview of TFTs, organic-inorganic complementary hybrid circuits and "state-of-the-art" metal-oxide-based TFTs.

Chapter Contents:

  • 12.1 Introduction
  • 12.1.1 Review of progress in oxide TFTs
  • 12.1.2 Review of progress in organic–inorganic hybrid complementary circuits
  • 12.2 TFT fabrication and characterization
  • 12.2.1 Device structure of TFTs
  • 12.2.2 Device operation of n-channel TFTs
  • 12.2.3 Current voltage characteristics of n-channel TFTs
  • 12.2.4 Device characterization of n-channel TFTs
  • 12.2.4.1 Extraction of performance parameters
  • 12.3 Experimental methods used for fabrication of TFTs
  • 12.3.1 Thermal evaporation
  • 12.3.2 Fabrication steps for oxide semiconductor solution process
  • 12.4 Development of high-k gate dielectric (Al2O3) and sputtered ZnO TFTs
  • 12.4.1 Comparison of sputtered and sprayed ZnO TFTs
  • 12.4.2 IGZO TFT performance investigation using Taguchi orthogonal arrays
  • 12.5 Understanding ZnO TFT UV sensor performance using Taguchi OA
  • Acknowledgment
  • References

Inspec keywords: MOSFET; thin film transistors

Other keywords: TFT; organic-inorganic complementary hybrid circuits; metal-oxide semiconductor thin-film transistors

Subjects: Insulated gate field effect transistors

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