Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms

Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms

For access to this article, please select a purchase option:

Buy chapter PDF
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this chapter, we have studied the device structure and characteristics of TFETs for energy-efficient circuit design useful for IoT edge computing platforms. TFET shows better electrical characteristics in terms of SS, transconductance, current efficiency, and device FoM. Unlike MOSFETs, TFETs exhibit distinct electrical properties like ambipolar conduction and unidirectional current conduction. TFET-based digital logic gates and buffer circuits are analyzed and benchmarked with Si FinFET for energy efficiency. TFETs outperform FinFET designs and achieve better energy efficiency at low V DD . Due to the high ON-current of the devices, TFET RO reports a frequency of 21 GHz, whereas FinFET RO achieves 13 GHz under similar design conditions. It was shown that due to the enhanced Miller capacitance effect in TFETs, transient characteristics of TFET RO suffers from high overshoots and undershoots. We further looked into TFET-based VCRO design wherein TFET design achieves wide tuning range compared to FinFET designs. Finally, we demonstrate TFET-based DLDO achieving low quiescent current with high-energy efficiency. In summary, TFETs have some unique characteristics that make them an ideal candidate for low voltage IoT platforms with specific design challenges to circuit and system design community as discussed.

Chapter Contents:

  • 11.1 Tunnel FET device structure, characteristics, and models
  • 11.1.1 Tunnel FET device structure and models
  • 11.1.2 Tunnel FET device characteristics
  • Transfer characteristics (ID–VGS) and subthreshold swing
  • Output characteristics and unidirectional current conduction
  • Ambipolar and p-i-n forward leakage of InAs TFET
  • TFET capacitance characteristics and Miller effect
  • Transconductance (gm)
  • Current efficiency, transit frequency, and figure of merit (FoM)
  • 11.2 TFET-based energy-efficient digital circuit design
  • 11.2.1 TFET-based digital logic gates
  • Static complementary TFET inverter
  • DC characteristics of a TFET complementary inverter
  • Performance comparison of TFET logic gates with FinFET
  • 11.2.2 Energy-efficient and reliable TFET-based digital buffers
  • Benchmarking of TFET buffer designs with Si FinFETs
  • TFET vs FinFET buffer designs with identical transistor sizes
  • TFET vs FinFET buffer design for Iso-energy
  • TFET vs FinFET buffer designs for Iso-speed
  • Noise margin analysis
  • 11.2.3 Impact of TFET (InAs) ambipolarity and alternative energy-efficient logic design
  • Impact of p-i-n forward leakage on TFET transmission gate (TG) logic
  • TFET Novel logic gates
  • 11.3 TFET-based low voltage analog and RF circuit design
  • 11.3.1 TFET-based ring oscillator
  • TFET-based 3-, 5-, and 7-stage RO design and performance analysis
  • 11.3.2 TFET voltage-controlled ring oscillator design
  • Performance benchmarking of TFET VCRO design
  • 11.4 TFET-based low voltage power management circuit design
  • 11.4.1 TFET-based digital low-dropout voltage regulator
  • 11.5 Summary
  • Acknowledgment
  • References

Inspec keywords: distributed processing; tunnel field-effect transistors; low-power electronics; Internet of Things; voltage-controlled oscillators; logic gates; elemental semiconductors; microwave field effect transistors; silicon

Other keywords: Si; tunneling field effect transistors; Si FinFET; quiescent current; power management circuit; transient characteristics; TFET-based VCRO design; unidirectional current conduction; electrical characteristics; voltage-controlled ring oscillator; energy efficient digital management circuit; energy-efficient circuit; digital logic gates; ambipolar conduction; IoT edge computing platforms; frequency 21.0 GHz; RF management circuit; buffer circuits; TFET; electrical properties; digital low-dropout; Miller capacitance effect; TFET-based DLDO

Subjects: Computer networks and techniques; Oscillators; Electrical/electronic equipment (energy utilisation); Logic elements; Logic circuits; Computer communications; Other field effect devices; Microwave integrated circuits

Preview this chapter:
Zoom in

Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs073f/PBCS073F_ch11-1.gif /docserver/preview/fulltext/books/cs/pbcs073f/PBCS073F_ch11-2.gif

Related content

This is a required field
Please enter a valid email address