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Fabrication of high-frequency resonators

Fabrication of high-frequency resonators

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This chapter focuses on fabrication laterally vibrating contour mode one port ZnO MEMS resonator for global system for mobile communication (GSM) frequency range. The bottom electrode is not used, thus saving the fabrication step. The resonators have been fabricated on Si/SiO2 by using three mask processes. The device area is small (W x L = 57.12 gm x 18.52 gm) compared to the previous works reported. The thickness of ZnO piezoelectric film was 250 nm in this fabrication. The piezoelectric ZnO thin film has been used due to its better coupling coefficient, low deposition temperature, excellent bonding, and unique semiconducting and optical properties. Among all the piezoelectric materials, zinc oxide is considered as a pollution-free green piezoelectric material. The ZnO is highly tensile and may undergo huge mechanical deformation for a long duration unaffected by the temperature variation. The synthesis of ZnO thin films or nano particles has been investigated in the past. The ZnO thin film can be deposited at room temperature and a variety of acidic etchants are also available.

Chapter Contents:

  • 7.1 Introduction
  • 7.2 Main steps for fabrication
  • 7.2.1 Oxidation of silicon
  • 7.2.2 Metallization and piezoelectric layer deposition
  • 7.2.3 Micromachining techniques
  • 7.2.3.1 Surface micromachining process
  • 7.2.3.2 Bulk micromachining process
  • 7.2.3.3 Molding process
  • 7.3 Sputter-deposited ZnO and its XRD pattern
  • 7.4 Selection of materials for the fabrication of micromechanical resonator
  • 7.5 Lithography—hard mask
  • 7.5.1 Optical lithography
  • 7.5.2 Electron beam lithography
  • 7.6 Preparation of hard mask for interdigitated laterally vibrating CMR
  • 7.7 Challenges in fabricating laterally vibrating CMR and issues related to lithography and its solution
  • 7.8 Laterally vibrating CMR fabrication process
  • 7.9 Tunability in resonance frequency
  • 7.10 Summary
  • Acknowledgements
  • References

Inspec keywords: semiconductor thin films; piezoelectric thin films; micromechanical resonators; etching; silicon compounds; microcavities; coating techniques

Other keywords: zinc oxide; GSM frequency range; mask processes; Si-SiO2; MEMS resonator; coupling coefficient; piezoelectric materials; size 250 nm; pollution-free green piezoelectric material; nanoparticles; acidic etchants; piezoelectric thin film; mechanical deformation; semiconducting properties; high-frequency resonators; optical properties; global system for mobile communication

Subjects: Fabrication of MEMS and NEMS devices; Thin film growth and epitaxy; Surface treatment and degradation in semiconductor technology; Methods of thin film deposition; Piezoelectric and ferroelectric materials; Materials for MEMS and NEMS device technology; Surface treatment (semiconductor technology); Micromechanical and nanomechanical devices and systems

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