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High-power laser diodes for direct applications and laser pumping

High-power laser diodes for direct applications and laser pumping

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This chapter focuses primarily on progress in HPDLS that are grown on GaAs substrates and emit in the operating wavelength range λop = 900... 1000 nm, where the highest performance is reported, and the majority of studies are performed. Our discussion starts with a review of progress in broad area BA-HPDLs that reach the very highest powers and efficiencies, at the cost of degraded beam quality.

Chapter Contents:

  • 3.1 Introduction
  • 3.2 High power broad area lasers
  • 3.2.1 Motivation
  • 3.2.2 Device configurations and performance comparison
  • 3.2.3 Challenge 1: efficiency and power
  • 3.2.4 Challenge 2: beam quality
  • 3.2.5 Challenge 3: external stabilization
  • 3.3 High power laterally single mode lasers
  • 3.4 High power lasers with monolithic grating stabilization
  • 3.4.1 Overgrown gratings
  • 3.4.2 Surface gratings
  • 3.4.3 Comparison
  • 3.5 Seed lasers
  • 3.5.1 Gain switching
  • 3.5.2 Q-switching
  • 3.5.3 Mode locking and pulse picking
  • 3.5.4 Pulse gating
  • 3.6 Wavelength limits on GaAs-based high radiance quantum well lasers
  • 3.6.1 Introduction
  • 3.6.2 Short wavelength limit
  • 3.6.3 Long wavelength limit
  • 3.7 Conclusions and path forward
  • Acknowledgments
  • References

Inspec keywords: semiconductor lasers; laser beams; optical pumping; gallium arsenide

Other keywords: degraded beam quality; wavelength 900 nm to 1000 nm; high-power laser diodes; GaAs substrates; laser pumping; broad area BA-HPDL; GaAs

Subjects: Textbooks; Laser beam characteristics and interactions; Design of specific laser systems; Semiconductor lasers; Laser beam interactions and properties; Lasing action in semiconductors

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