Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Conclusion

Conclusion

For access to this article, please select a purchase option:

Buy chapter PDF
$16.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Modelling Methodologies in Analogue Integrated Circuit Design — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Analogue integrated circuit design started with primitive transistor models that were able to capture the operation of solid-state devices. Only simple functionality could be accomplished through the circuits designed. Via aggressive scaling, however, the number of transistors that could be integrated has dramatically increased, thereby boosting the capability of circuits to achieve diverse and complex tasks. At first, more transistors meant an augmented computational cost only, since a large number of equations had to be solved concurrently to determine the circuit response. The time to find out the transistor operating points became crucial. Transistor models should be both accurate and easy to evaluate. Thus, alternative approaches have been proposed to characterize the device physics mathematically, some of which have led to the development of well-known transistor models, such as BSIM, EKV, and PSP, over the years. As the scaling continued in its unprecedented pace, novel modelling issues started to arise. Simulations using primitive device models with few parameters were not sufficient to predict the outcomes of measurements. There were different reasons for this observation: smaller transistor sizes were triggering quantum mechanical effects, such as quantum tunnelling as well as entailing models with more complex underlying equations. Moreover, with shorter geometries, device-todevice variation of transistor parameters significantly increased. There was a need to characterize the changes induced by manufacturing steps with a separate set of parameters. Finally, devices were failing after prolonged usage due to the high vertical and lateral electric fields they undergo during regular operation. These were basically reliability issues occurring towards the end of the device lifetime. Thus, reliability phenomena needed to be described with dedicated models, as well.

Chapter Contents:

  • Conclusion

Inspec keywords: electric fields; integrated circuit design; integrated circuit modelling; microwave devices; transistor circuits; integrated circuit reliability; integrated circuit manufacture; analogue integrated circuits

Other keywords: entailing models; aggressive scaling; device-to-device variation; vertical electric fields; solid-state devices; reliability issues; analogue integrated circuit design; circuit response; quantum tunnelling; augmented computational cost; lateral electric fields; PSP; transistor operating points; circuit manufacturing steps; quantum mechanical effects; transistor models; EKV; BSIM

Subjects: Reliability; Microwave circuits and devices; Analogue circuit design, modelling and testing; Production facilities and engineering; General electrical engineering topics; Semiconductor integrated circuit design, layout, modelling and testing

Preview this chapter:
Zoom in
Zoomout

Conclusion, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs051e/PBCS051E_ch13-1.gif /docserver/preview/fulltext/books/cs/pbcs051e/PBCS051E_ch13-2.gif

Related content

content/books/10.1049/pbcs051e_ch13
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address