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Spintronic resistive memories: sensing schemes

Spintronic resistive memories: sensing schemes

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In this chapter, we discuss the physical principles of spintronic devices and their sensing challenges and compare the different sensing schemes withing terms of the power and speed constraints. Moreover, the circuit operation and its benefits over other implementations of the proposed sensing scheme are clarified.

Chapter Contents:

  • 12.1 Background
  • 12.1.1 Physical structure of an MTJ
  • 12.1.2 The switching mechanism of STT-MRAM
  • 12.2 Sensing schemes of STT-MRAM
  • 12.3 Conclusion
  • Acknowledgments
  • References

Inspec keywords: magnetic field measurement; magnetic storage; magnetoelectronics; magnetic sensors

Other keywords: spintronic resistive memories; sensing schemes

Subjects: Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices; Sensing devices and transducers; Magnetic variables measurement

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