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Technology and modeling of DNTT organic thin-film transistors

Technology and modeling of DNTT organic thin-film transistors

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In this chapter, novel technology and modeling of DNTT-based OTFT is presented by considering field-dependent mobility model and density of states model. Finite element method (FEM)-based device simulation model is able to produce output characteristics in linear and saturation region and transfer characteristics below and above the threshold region of a DNTT-based OTFT. Some important applications, advantages, and disadvantages of OTFTs are also discussed briefly.

Chapter Contents:

  • 8.1 Introduction
  • 8.2 Motivation
  • 8.2.1 Potential applications of flexible organic electronics
  • 8.3 Organic thin-film transistors (OTFTs)
  • 8.3.1 Working principle of OTFT
  • 8.3.2 OTFT parameter
  • 8.4 Modeling and simulation of DNTT-based OTFT
  • 8.4.1 Configurations of DNTT-based OTFT
  • 8.4.2 Device physical modeling
  • 8.4.2.1 Density of states model
  • 8.4.2.2 Trapped carrier density
  • 8.4.2.3 Poole–Frenkel mobility model
  • 8.4.3 Simulation results of DNTT-based OTFT
  • 8.5 Applications of OTFT
  • 8.5.1 Organic light-emitting diodes (OLEDs)
  • 8.5.2 Radio frequency identification (RFID) tags
  • 8.5.3 DNA sensors
  • 8.6 Conclusion
  • Acknowledgments
  • References

Inspec keywords: thin film transistors; organic field effect transistors; finite element analysis; semiconductor device models

Other keywords: FEM-based device simulation model; finite element method; output characteristics; linear region; threshold region; transfer characteristics; saturation region; DNTT-based OTFT modelling; DNTT organic thin-film transistors

Subjects: Finite element analysis; Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

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