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Single electron devices: concept to realization

Single electron devices: concept to realization

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Single electron transistors are widely perceived as the next generation devices, and beyond Moore's law devices due to their promising aspects of low power consumption, high switching speed, compact size, and importantly the ability to shrink to atomic scale. The single electron devices operation is based on the quantum phenomenon called “tunneling”. Though the basic structure and operating principle of these devices is quite simpler, their fabrication and real-time operation is equally difficult, as it requires multiple conditions of Coulomb blockade to be satisfied for incoherent transport. This chapter provides comprehensive information about the single electron devices, starting from their benefit over other devices in the same series, associated concepts, operating principle, and the notable advancements in experimental as well as theoretical research on these devices. This chapter is expected to work as an absolute guide for any researcher interested in single electron devices.

Chapter Contents:

  • 3.1 Introduction
  • 3.1.1 Importance of single electron devices
  • 3.1.2 Theory of single electron devices
  • 3.1.3 Single electron transistor: principle of operation
  • 3.1.4 Advantages, challenges, and applications
  • 3.2 Experimental research
  • 3.2.1 First experimental observation of single electron effects
  • 3.2.2 Single molecular single electron transistor
  • 3.2.3 Single atom single electron transistor
  • 3.3 Computational research
  • 3.3.1 SET as switching element
  • 3.3.2 SET as sensor
  • References

Inspec keywords: single electron transistors; low-power electronics; tunnelling; Coulomb blockade

Other keywords: single electron transistors; high switching speed; single electron device operation; incoherent transport; low power consumption; atomic scale; tunneling; Coulomb blockade; quantum phenomenon; next generation devices; Moore law devices

Subjects: Quantum interference devices

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