In this chapter, the operating principle of JTET discussed in Chapter 11 has been extended for the study of MoS₂ JTET considering MoS₂ /hBN/MoS₂ for reduced subthreshold slope operation and sustainable leakage. The interlayer tunneling-based barrier control mechanism as proposed for graphene JTET in Chapter 11 and [16] is used for the current transport study of MoS₂ JTET through self-consistent simulation method [22]. Similar to graphene JTET, multilayer hBN is considered as the gate dielectric for MoS₂ JTET. The performances of MoS₂ JTET are compared with the earlier reported graphene-based iTFET.

Chapter Contents:

• 12.1 Introduction
• 12.2 Device structure and operation
• 12.3 Estimation of drain current
• 12.4 Results and discussion
• 12.5 Conclusion
• References

Inspec keywords: molybdenum compounds; tunnelling; graphene devices; tunnel field-effect transistors

Other keywords: reduced subthreshold slope operation; graphene-based iTFET; MoS₂-BN; interlayer tunneling-based barrier control mechanism; graphene JTET; current transport study; gate dielectric; sustainable leakage; molybdenum disulfide-boron nitride junctionless tunnel effect transistor; self-consistent simulation method; multilayer hBN

Subjects: Other field effect devices; Fullerene, nanotube and related devices