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Molybdenum disulfide–boron nitride junctionless tunnel effect transistor

Molybdenum disulfide–boron nitride junctionless tunnel effect transistor

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In this chapter, the operating principle of JTET discussed in Chapter 11 has been extended for the study of MoS2 JTET considering MoS2 /hBN/MoS2 for reduced subthreshold slope operation and sustainable leakage. The interlayer tunneling-based barrier control mechanism as proposed for graphene JTET in Chapter 11 and [16] is used for the current transport study of MoS2 JTET through self-consistent simulation method [22]. Similar to graphene JTET, multilayer hBN is considered as the gate dielectric for MoS2 JTET. The performances of MoS2 JTET are compared with the earlier reported graphene-based iTFET.

Chapter Contents:

  • 12.1 Introduction
  • 12.2 Device structure and operation
  • 12.3 Estimation of drain current
  • 12.4 Results and discussion
  • 12.5 Conclusion
  • References

Inspec keywords: graphene devices; molybdenum compounds; tunnel field-effect transistors; tunnelling

Other keywords: self-consistent simulation method; current transport study; sustainable leakage; interlayer tunneling-based barrier control mechanism; graphene-based iTFET; reduced subthreshold slope operation; graphene JTET; gate dielectric; MoS2-BN; multilayer hBN; molybdenum disulfide-boron nitride junctionless tunnel effect transistor

Subjects: Fullerene, nanotube and related devices; Other field effect devices

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