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Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration

Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration

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A new type of graphene-switching transistor termed as "junctionless tunnel effect transistor (JTET)" based on graphene-hBN-graphene vertical heterostructure and interlayer tunneling is proposed and an analytical current transport model has been developed. The drain current in graphene JTET flows between the source and drain of bottom graphene layer. The current in the channel is regulated by the shift in channel Fermi level which depends on the net vertical tunneling of carriers from top graphene to bottom graphene layers through hBN. Performance of graphene JTET is evaluated for different numbers of hBN layers. A comparison between graphene JTET and ITRS projected 2020 nMOSFET is also provided apart from graphene JTET performance comparison with similar iTFETs. Current saturation is observed in graphene JTET output characteristic for both p- and n -type operations, which makes graphene JTET suitable for digital circuit design. Graphene JTET is also capable of suppressing NDR effect, and shows steep subthreshold slope with high on/off current ratio and normal operation at room temperature. A complementary vertical inverter is presented similar to a CMOS inverter and analyzed for its performance. Graphene JTET vertical inverter gives inverter gain higher than unity at the low supply voltage and both low and high noise margins. It is concluded that with an average 25 mV/decade subthreshold slope at 0.1 V supply voltage and a current ratio of ~104 , graphene interlayer junctionless tunnel effect transistor meets the ITRS requirement of device scaling for energy-efficient circuit design.

Chapter Contents:

  • 11.1 Introduction
  • 11.2 Device structure and operation
  • 11.3 Current transport model
  • 11.3.1 Estimation of tunneling probability
  • 11.3.2 Estimation of charge density
  • 11.3.3 Estimation of drain current
  • 11.4 Performance analysis of interlayer tunneling-based graphene JTET
  • 11.5 Voltage transfer characteristics of graphene JTET inverter
  • 11.6 Conclusion
  • References

Inspec keywords: graphene devices; tunnel field-effect transistors; semiconductor device models

Other keywords: n-type operations; complementary vertical inverter; graphene interlayer junctionless tunnel effect transistor; p-type operations; steep subthreshold slope; inverter gain; graphene JTET vertical inverter; drain current; NDR effect; ITRS projected 2020 nMOSFET; iTFET; graphene-hBN-graphene vertical heterostructure; graphene-switching transistor; low-dimension materials; channel Fermi level; current transport model; digital circuit design

Subjects: Fullerene, nanotube and related devices; Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

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