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## Tunnel junctions to tunnel field-effect transistors—technologies, current transport models, and integration

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In this chapter, an analytical current transport model of a p-i-n n-type armchair GNR TFET is developed which is compared with numerical simulation. Two separate current transport models are derived analytically from semi-classical and semi-quantum modeling approaches. Non-equilibrium Green function (NEGF)-based numerical simulation study is also carried out. Results obtained from these two methods are compared with the numerical simulation to establish analytical models. The analytical model in the work of Zhang et al. [2] is revisited and results are also compared with the analytical and numerically simulated results in this work. Furthermore, GNR TFET's performance is studied for varying GNR width using semi-classical, semi-quantum and NEGF simulation-based current transport models. Finally, complementary GNR TFET inverter for digital circuit design is demonstrated through the computation of voltage transfer characteristic from all three modeling approaches.

Chapter Contents:

• 10.1 Introduction—band-to-band tunneling graphene nanoribbon tunnel FETs
• 10.2 Device structure and operation of GNR TFET
• 10.3 Current transport model
• 10.3.1 Semi-classical analytical model
• 10.3.2 Semi-quantum analytical model
• 10.3.3 NEGF-based numerical model: simulation method and approach
• 10.4 Transfer characteristics of GNR TFET
• 10.5 Subthreshold slope of GNR TFET
• 10.6 Estimation of subthreshold swing point, I60
• 10.7 Output characteristics of GNR TFET
• 10.8 Width-dependent performance analysis of GNR TFET
• 10.9 Voltage transfer characteristics of GNR TFET complementary inverter
• 10.10 Conclusion
• References

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