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Graphene and other than graphene materials technology and beyond

Graphene and other than graphene materials technology and beyond

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Graphene with its unique electronic properties is highly suitable for numerous electronic applications. Among different growth techniques, CVD is most promising due to its low cost and large area. However, growth of large-area single crystal graphene is still challenging. Owing to its zero bandgap property, graphene is not yet suitable for digital applications. However, finite bandgap can be obtained in the form of GNR which demonstrates width and edge-type dependent energy bandgap. GNR TFET can be a viable option for low power high-performance integrated circuit design. By utilizing the zero band properties of graphene, the promise of graphene interlayer tunnel transistor can also be explored. Other than graphene 2D materials such as layered transition-metal dichalcogenide (TMD) and Xenes have emerged and shown great promise for electronics, photonics, energy harvesting, and biosensors.

Chapter Contents:

  • 1.1 Introduction—graphene and graphene nanoribbon
  • 1.2 Synthesis of graphene
  • 1.2.1 Growth of multilayer graphene film on copper
  • 1.3 Electronic structure of graphene
  • 1.4 Bandgap engineering of graphene
  • 1.4.1 Energy bandgaps of GNR
  • 1.5 GNR-based transistors, circuits, and interconnects
  • 1.6 Doping of graphene
  • 1.7 Other than graphene materials and beyond
  • 1.8 Conclusion
  • References

Inspec keywords: energy gap; chemical vapour deposition; low-power electronics; integrated circuit design; graphene devices; tunnel field-effect transistors

Other keywords: finite bandgap; large-area single crystal graphene; energy harvesting; zero bandgap property; electronic applications; graphene materials technology; GNR TFET; photonics; CVD; electronic properties; growth techniques; edge-type dependent energy bandgap; biosensors; Xenes; graphene 2D materials; low power high-performance integrated circuit design; layered transition-metal dichalcogenide; graphene interlayer tunnel transistor

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Other field effect devices

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